Design of an High Efficiency Pallet Power Amplifier Module |
Gil-Wong Choi, Hyoung-Jong Kim, Jin-Joo Choi, Jun-Ho Choi |
1Kwangwoon University 2 |
S-대역 고효율 Pallet 전력증폭기 모듈 설계 |
최길웅, 김형종, 최진주, 최준호 |
1광운대학교 2국방과학연구소 |
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Abstract |
This paper describes the design and fabrication of a high-efficiency GaN HEMT(Gallium Nitride High-electron Mobility Transistor) Pallet power amplifier module for S-band phased array radar applications. Pallet amplifier module has a series 2-cascaded power amplifier and the final amplification-stage consists of balanced GaN HEMT transistor. In order to achieve high efficiency characteristic of pallet power amplifier module, all amplifiers are designed to the switching-mode amplifier. We performed with various PRF(Pulse Repetition Frequency) of 1, 10, 100 and 1000Hz at a fixed pulse width of $100{mu}s$. In the experimental results, the output power, gain, and drain efficiency(${eta}_{total}$) of the Pallet power amplifier module are 300W, 33dB, and 51% at saturated output power of 2.9GHz, respectively. |
Key Words:
GaN HEMT, High Efficiency, Class-E Power Amplifier, Class-F Power Amplifier |
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