| Development of A X-band 12 W High Power Amplifier MMIC |
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Dong-Pil Chang, Youn-Sub Noh, Jeong-Won Lee, Ki-Burm Ahn, Man-Seok Uhm, In-Bok Yom, Hyung-Ki Na, Chang-Soo Ahn, Sun-Joo Kim |
1ETRI
2LIG NEX1
3 |
| X-대역 12-W 급 고출력증폭기 MMIC 개발 |
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장동필, 노윤섭, 이정원, 안기범, 엄만석, 염인복, 나형기, 안창수, 김선주 |
1한국전자통신연구원
2엘아이지 넥스원
3국방과학연구소 |
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| Abstract |
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In this paper, we described the design and test results of a high output power amplifier MMIC developed by using 0.5um power pHEMT processes on a 6-inch GaAs wafer for the X-band T/R module application. In the MMIC design, we have used a simple on-chip gate active bias technology to compensate the threshold-voltage variation of pHEMT during the fabrication process and 16-to-1 power combining method to achieve the output power over 10watt. The fabricated chip has an output power over 12watts and maximum PAE of 32% over the frequency range of fo +/-750MHz. |
| Key Words:
High Power Amplifier, MMIC |
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