[1] Sang_yeop Lee and Jaewoong Yi, "A Study on the Application of High-Power GaN SSPA for Miniature Radar," Journal of the KIMST, Vol. 19, No. 5, pp. 571–581, 2016.
[2] Inder J. Bahl, "Fundamental of RF and Microwave Transistor Amplifier," John Wiley & Sons, Inc., Canada, p. 622009.
[3] A. Darwish, B. Huebschman, E. Viveiros and H. Hung, "Dependence of GaN HEMT Millimeter-Wave Performance on Temperature," IEEE Transactions on Microwave Theory and Techniques, Vol. 57, No. 12/2, pp. 3205–3211, 2009.
[4] B. Green, V. Tilak, V. Kaper, J. Smart, J. Shealy and L. Eastman, "Microwave Power Limits of AlGaN/GaN HEMTs under Pulsed-Bias Conditions," IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 2, pp. 618–623, 2003.
[5] M. Dammann, M. Cäsar, P. Waltereit, W. Bronner, H. Konstanzer, R. Quay, S. Müller, M. Mikulla, O. Ambacher, P. van der Wel, T. Rödle, R. Behtash, F. Bourgeois and K. Riepe, "Reliability of AlGaN/GaN HEMTs under DC - and RF-operation," Reliability of Compound Semiconductors Digest(ROCS), p. 19–32, 2009.
[6] W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura and T. Ogura, "Influence of Surface Defect Charge at AlGaN-GaNHEMT upon Schottky Gate Leakage Current and Breakdown Voltage," IEEE Transactions on Electron Devices, Vol. 52, No. 2, pp. 159–164, 2005.
[7] Y. S. Lin, Y. W. Lain and S. Hsu, "AlGaN/GaN HEMTs with Low Leakage Current and High On/Off Current Ratio," IEEE Electron Device Letters, Vol. 31, No. 2, pp. 102–104, 2010.
[8] R. Coffie, S. Heikman, D. Buttari, S. Keller, A. Chini, L. Shen, N. Zhang, A. Jimenez, D. Jena and U. Mishra, PGaN/AlGaN/GaN High Electron Mobility Transistors, in Device Research Conference Digest(DRC). pp. 25–26, 2002.
[9] A. Zhang, L. Rowland, E. Kaminsky, J. Kretchmer, R. Beaupre, J. Garrett and J. Tucker, Microwave Power SiC MESFETs and GaN HEMTs, in IEEE Lester Eastman Conference on High Performance Devices. pp. 181–185, 2002.
[10] R. Vetury, N. Zhang, S. Keller and U. Mishra, "The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs," IEEE Transactions on Electron Devices, Vol. 48, No. 3, pp. 560–566, 2001.
[11] O. Schuler, H. Fourre, R. Fauquembergue and A. Cappy, Influence of Parasitic Capacitances on the Performance of Passivated InAlAs/InGaAs HEMTs in the Millimeter Wave Range, in IPRM International Conference on Indium Phosphide and Related Materials. pp. 646–649, 1996.
[12] D. Blackburn, Temperature Measurements of Semiconductor Devices - A Review, in IEEE Semiconductor Thermal Measurement and Management Symposium. pp. 70–80, Sept. 2004.
[13] S. Feng, P. Hu, G. Zhang, C. Guo, X. Xie and T. Chen, Determination of Channel Temperature of AlGaN/GaN HEMT by Electrical Method, in Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE. pp. 165–169, 2010.