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J. KIMS Technol > Volume 15(4); 2012 > Article
Journal of the Korea Institute of Military Science and Technology 2012;15(4):502-506.
DOI: https://doi.org/10.9766/KIMST.2012.15.4.502   
The Preferred Orientation of CdSe and CdS Thin Films on the AlOx and SiO2 Templates
Young-Gun Lee, Ki-Seog Chang
Korea Air Force Academy
AlOx와 SiO2 형판위 CdSe와 CdS 박막의 우선방위(Preferred Orientation) 특성
이영건, 장기석
공군사관학교
Abstract
In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.
Key Words: Vacuum Coating Technique, Preferred Orientation, Semiconductor Thin Films, ZnS, CdS, (Zn, Cd)S, CdSe
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