Characteristics of Damage on Photosensor Irradiated by Intense Illumination : Thermal Diffusion Model |
Chan-Ho Kwon, Myeong-Suk Shin, Hyon-Seok Hwang, Hong-Lae Kim, Seong-Shik Kim, Min-Kyu Park |
1Department of Chemistry, Kangwon National University 2 |
고섬광에 노출된 광센서의 손상 특성 : 열확산 모델 |
권찬호, 신명숙, 황현석, 김홍래, 김성식, 박민규 |
1강원대학교 화학과 2국방과학연구소 |
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Abstract |
Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold. |
Key Words:
Shock Wave, Intense Illumination, Energy Density Threshold, Thermal Diffusion, Photosensor, Free Charge Carrier, Photosensitivity |
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