| High Temperature Dielectric Properties of Silicon Nitride Materials |
|
Doo-Hyun Choi |
| 질화규소 재료의 고온 유전물성 평가 |
|
최두현 |
|
국방과학연구소 |
|
|
| Abstract |
|
Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{circ}C$, but less increase from $300^{circ}C$ to $800^{circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized. |
| Key Words:
High Temperature Dielectric Properties, Quartz Glass, Silicon Nitride, Waveguide, Jarvis Method, Dielectric Constant, Loss Tangent |
|
PDF Links
Full text via DOI
Download Citation
